TGF2952

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TGF2952

Transistor Polarity :	N-Channel
Technology :	GaN SiC
Product Category :	RF JFET Transistors
Mounting Style :	SMD/SMT
Gain :	20.4 dB
Transistor Type :	HEMT
Output Power :	38.4 dBm
Package / Case :	Die
Maximum Operating Temperature :	+ 150 C
Vds - Drain-Source Breakdown Voltage :	32 V
Packaging :	Waffle
Maximum Drain Gate Voltage :	100 V
Id - Continuous Drain Current :	480 mA
Pd - Power Dissipation :	10.5 W
Manufacturer :	Qorvo
Description	RF JFET Transistors DC-14GHz 5W 32V GaN P3dB @ 3GHz 38.6dBm

Detailed Product Description

The TGF2952,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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