BF512,215

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BF512,215

Transistor Polarity :	N-Channel
Technology :	Si
Product Category :	RF JFET Transistors
Mounting Style :	SMD/SMT
Transistor Type :	JFET
Pd - Power Dissipation :	250 mW
Package / Case :	SOT-23
Maximum Operating Temperature :	+ 150 C
Vds - Drain-Source Breakdown Voltage :	20 V
Packaging :	Reel
Maximum Drain Gate Voltage :	20 V
Id - Continuous Drain Current :	30 mA
Vgs - Gate-Source Breakdown Voltage :	20 V
Manufacturer :	NXP Semiconductors
Description	RF JFET Transistors TAPE7 FET-RFSS

Detailed Product Description

The BF512,215,from NXP Semiconductors,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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