QPD1000

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QPD1000

Transistor Polarity :	N-Channel
Technology :	GaN SiC
Product Category :	RF JFET Transistors
Mounting Style :	SMD/SMT
Gain :	19 dB
Transistor Type :	HEMT
Output Power :	24 W
Package / Case :	QFN-8
Maximum Operating Temperature :	+ 85 C
Vds - Drain-Source Breakdown Voltage :	28 V
Packaging :	Tray
Id - Continuous Drain Current :	817 mA
Vgs - Gate-Source Breakdown Voltage :	100 V
Pd - Power Dissipation :	28.8 W
Manufacturer :	Qorvo
Description	RF JFET Transistors 50-1000MHz 15W 28V SSG 19dB GaN

Detailed Product Description

The QPD1000,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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