CGHV14500F

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Beijing Silk Road Enterprise Management Services Co.,LTD

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CGHV14500F

Transistor Polarity :	N-Channel
Technology :	GaN
Product Category :	RF JFET Transistors
Mounting Style :	Screw
Gain :	17.1 dB
Transistor Type :	HEMT
Output Power :	510 W
Package / Case :	440117
Maximum Operating Temperature :	+ 130 C
Vds - Drain-Source Breakdown Voltage :	150 V
Packaging :	Tube
Maximum Drain Gate Voltage :	-
Id - Continuous Drain Current :	36 A
Vgs - Gate-Source Breakdown Voltage :	- 10 V to + 2 V
Pd - Power Dissipation :	-
Manufacturer :	Wolfspeed / Cree
Description	RF JFET Transistors GaN HEMT 1.2-1.4GHz, 500 Watt

Detailed Product Description

The CGHV14500F,from Wolfspeed / Cree,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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