J111,126

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J111,126

Transistor Polarity :	N-Channel
Technology :	Si
Product Category :	RF JFET Transistors
Mounting Style :	Through Hole
Transistor Type :	JFET
Pd - Power Dissipation :	400 mW
Package / Case :	TO-92
Vds - Drain-Source Breakdown Voltage :	40 V
Packaging :	Ammo Pack
Id - Continuous Drain Current :	20 mA
Vgs - Gate-Source Breakdown Voltage :	40 V
Manufacturer :	NXP Semiconductors
Description	RF JFET Transistors N-Channel Single 40V 20mA

Detailed Product Description

The J111,126,from NXP Semiconductors,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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