CGHV1J025D

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Beijing Silk Road Enterprise Management Services Co.,LTD

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CGHV1J025D

Transistor Polarity :	N-Channel
Technology :	GaN
Product Category :	RF JFET Transistors
Mounting Style :	SMD/SMT
Gain :	17 dB
Transistor Type :	HEMT
Output Power :	25 W
Package / Case :	Bare Die
Maximum Operating Temperature :	-
Vds - Drain-Source Breakdown Voltage :	100 V
Packaging :	Gel Pack
Maximum Drain Gate Voltage :	-
Id - Continuous Drain Current :	2 A
Vgs - Gate-Source Breakdown Voltage :	- 10 V to + 2 V
Pd - Power Dissipation :	-
Manufacturer :	Wolfspeed / Cree
Description	RF JFET Transistors GaN HEMT Die DC-18GHz, 25 Watt

Detailed Product Description

The CGHV1J025D,from Wolfspeed / Cree,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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