A3G26H200W17SR3

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A3G26H200W17SR3

Product Category :	RF Amplifier
Gain (dB) :	14.2
Output Power (W) :	34
Avg Power (W) :	34
Frequency Min (GHz) :	2.496
Process :	GaN
Frequency Max (GHz) :	2.69
Manufacturer :	NXP USA Inc.
Description	RF Power Discrete Transistors

Detailed Product Description

The A3G26H200W17SR3,from NXP USA Inc.,is RF Amplifier.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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