2N5116

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2N5116

Transistor Polarity :	P-Channel
Vgs - Gate-Source Breakdown Voltage :	30 V
Product Category :	JFET
Mounting Style :	Through Hole
Pd - Power Dissipation :	500 mW
Package / Case :	TO-18-3
Maximum Operating Temperature :	+ 200 C
Vds - Drain-Source Breakdown Voltage :	30 V
Id - Continuous Drain Current :	- 500 pA
Rds On - Drain-Source Resistance :	175 Ohms
Manufacturer :	Microsemi
Description	JFET JFET

Detailed Product Description

The 2N5116,from Microsemi,is JFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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