GT30J121(Q)

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GT30J121(Q)

Product Category :	IGBT Transistors
Mounting Style :	Through Hole
Collector- Emitter Voltage VCEO Max :	600 V
Package / Case :	TO-3P
Maximum Operating Temperature :	+ 150 C
Maximum Gate Emitter Voltage :	+/- 20 V
Configuration :	Single
Continuous Collector Current at 25 C :	30 A
Manufacturer :	Toshiba
Description	IGBT Transistors 600V/30A DIS

Detailed Product Description

The GT30J121(Q),from Toshiba,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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