IHW30N90T

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IHW30N90T

Gate-Emitter Leakage Current :	600 nA
Product Category :	IGBT Transistors
Mounting Style :	Through Hole
Continuous Collector Current at 25 C :	60 A
Pd - Power Dissipation :	428 W
Collector- Emitter Voltage VCEO Max :	900 V
Package / Case :	TO-247-3
Maximum Operating Temperature :	+ 175 C
Maximum Gate Emitter Voltage :	20 V
Packaging :	Tube
Configuration :	Single
Collector-Emitter Saturation Voltage :	1.8 V
Manufacturer :	Infineon Technologies
Description	IGBT Transistors LOW LOSS DuoPack 900V 30A

Detailed Product Description

The IHW30N90T,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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