STGW50H60DF

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STGW50H60DF

Gate-Emitter Leakage Current :	250 nA
Product Category :	IGBT Transistors
Mounting Style :	Through Hole
Pd - Power Dissipation :	360 W
Collector-Emitter Saturation Voltage :	1.8 V
Package / Case :	TO-247
Maximum Operating Temperature :	+ 150 C
Packaging :	Tube
Maximum Gate Emitter Voltage :	+/- 20 V
Continuous Collector Current at 25 C :	100 A
Manufacturer :	STMicroelectronics
Description	IGBT Transistors 50A 600V FST IGBT Ultrafast Diode

Detailed Product Description

The STGW50H60DF,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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