NGTB15N120LWG

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NGTB15N120LWG

Gate-Emitter Leakage Current :	100 nA
Product Category :	IGBT Transistors
Mounting Style :	Through Hole
Continuous Collector Current at 25 C :	30 A
Pd - Power Dissipation :	156 W
Collector- Emitter Voltage VCEO Max :	1200 V
Package / Case :	TO-247
Packaging :	Tube
Maximum Gate Emitter Voltage :	20 V
Collector-Emitter Saturation Voltage :	2.2 V
Manufacturer :	onsemi
Description	IGBT Transistors 1200V/15A IGBT LPT TO-247

Detailed Product Description

The NGTB15N120LWG,from onsemi,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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