IRG7PH50K10DPBF

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IRG7PH50K10DPBF

Gate-Emitter Leakage Current :	100 nA
Product Category :	IGBT Transistors
Mounting Style :	Through Hole
Continuous Collector Current at 25 C :	90 A
Pd - Power Dissipation :	400 W
Collector- Emitter Voltage VCEO Max :	1200 V
Package / Case :	TO-247AC-3
Maximum Operating Temperature :	+ 150 C
Maximum Gate Emitter Voltage :	+/- 30 V
Packaging :	Tube
Configuration :	Single
Collector-Emitter Saturation Voltage :	2.4 V
Manufacturer :	IR / Infineon
Description	IGBT Transistors 1200V UltraFast Discrete IGBT

Detailed Product Description

The IRG7PH50K10DPBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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