STGW60H65DF

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STGW60H65DF

Maximum Gate Emitter Voltage :	20 V
Mounting Style :	Through Hole
Continuous Collector Current at 25 C :	120 A
Pd - Power Dissipation :	360 W
Collector- Emitter Voltage VCEO Max :	650 V
Package / Case :	TO-247
Packaging :	Tube
Product Category :	IGBT Transistors
Collector-Emitter Saturation Voltage :	2.1 V
Manufacturer :	STMicroelectronics
Description	IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT

Detailed Product Description

The STGW60H65DF,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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