RGTH80TS65DGC11

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RGTH80TS65DGC11

Gate-Emitter Leakage Current :	+/- 200 nA
Product Category :	IGBT Transistors
Mounting Style :	Through Hole
Continuous Collector Current at 25 C :	70 A
Pd - Power Dissipation :	234 W
Collector- Emitter Voltage VCEO Max :	650 V
Package / Case :	TO-247-3
Maximum Operating Temperature :	+ 175 C
Packaging :	Tube
Maximum Gate Emitter Voltage :	+/- 30 V
Collector-Emitter Saturation Voltage :	1.6 V
Manufacturer :	ROHM Semiconductor
Description	IGBT Transistors 650V 40A IGBT Stop Trench

Detailed Product Description

The RGTH80TS65DGC11,from ROHM Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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