IXGX72N60A3H1

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IXGX72N60A3H1

Gate-Emitter Leakage Current :	100 nA
Product Category :	IGBT Transistors
Mounting Style :	Through Hole
Continuous Collector Current at 25 C :	75 A
Pd - Power Dissipation :	540 W
Collector- Emitter Voltage VCEO Max :	600 V
Package / Case :	PLUS 247-3
Maximum Operating Temperature :	+ 150 C
Packaging :	Tube
Maximum Gate Emitter Voltage :	+/- 20 V
Collector-Emitter Saturation Voltage :	1.35 V
Manufacturer :	IXYS
Description	IGBT Transistors 75Amps 600V

Detailed Product Description

The IXGX72N60A3H1,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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