IXBF40N160

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IXBF40N160

Gate-Emitter Leakage Current :	500 nA
Product Category :	IGBT Transistors
Mounting Style :	Through Hole
Continuous Collector Current at 25 C :	28 A
Pd - Power Dissipation :	250 W
Collector- Emitter Voltage VCEO Max :	1.6 kV
Package / Case :	ISOPLUS i4-PAC-3
Maximum Operating Temperature :	+ 150 C
Maximum Gate Emitter Voltage :	+/- 20 V
Packaging :	Tube
Configuration :	Single
Collector-Emitter Saturation Voltage :	6.2 V
Manufacturer :	IXYS
Description	IGBT Transistors 40 Amps 1600V

Detailed Product Description

The IXBF40N160,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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