BSM75GAR120DN2

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BSM75GAR120DN2

Gate-Emitter Leakage Current :	400 nA
Product Category :	IGBT Transistors
Mounting Style :	Screw
Continuous Collector Current at 25 C :	100 A
Pd - Power Dissipation :	625 W
Collector- Emitter Voltage VCEO Max :	1200 V
Package / Case :	IS4 (34 mm )-5
Maximum Operating Temperature :	+ 150 C
Maximum Gate Emitter Voltage :	+/- 20 V
Configuration :	Single
Collector-Emitter Saturation Voltage :	2.5 V
Manufacturer :	Infineon Technologies
Description	IGBT Transistors 1200V 100A GAR CH

Detailed Product Description

The BSM75GAR120DN2,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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