IKW40N65ES5

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IKW40N65ES5

Gate-Emitter Leakage Current :	100 nA
Product Category :	IGBT Transistors
Mounting Style :	Through Hole
Pd - Power Dissipation :	230 W
Collector- Emitter Voltage VCEO Max :	650 V
Package / Case :	TO-247-3
Maximum Operating Temperature :	+ 175 C
Maximum Gate Emitter Voltage :	+/- 20
Collector-Emitter Saturation Voltage :	1.35 V
Manufacturer :	Infineon Technologies
Description	IGBT Transistors Trenchstop 5 IGBT

Detailed Product Description

The IKW40N65ES5,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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