APT95GR65B2

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APT95GR65B2

Gate-Emitter Leakage Current :	+/- 250 nA
Product Category :	IGBT Transistors
Mounting Style :	Through Hole
Pd - Power Dissipation :	892 W
Collector- Emitter Voltage VCEO Max :	650 V
Package / Case :	TO-247-3
Maximum Operating Temperature :	+ 150 C
Maximum Gate Emitter Voltage :	+/- 30 V
Configuration :	Single
Continuous Collector Current at 25 C :	208 A
Manufacturer :	Microsemi
Description	IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8

Detailed Product Description

The APT95GR65B2,from Microsemi,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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