FPAB30BH60B

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FPAB30BH60B

Gate-Emitter Leakage Current :	250 uA
Product Category :	IGBT Transistors
Mounting Style :	Through Hole
Collector- Emitter Voltage VCEO Max :	600 V
Pd - Power Dissipation :	104 W
Maximum Operating Temperature :	+ 125 C
Packaging :	Tube
Continuous Collector Current at 25 C :	30 A
Manufacturer :	Fairchild Semiconductor
Description	IGBT Transistors SPM for Front-End Rectifier;Motion-SPM

Detailed Product Description

The FPAB30BH60B,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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