STGP35HF60W

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STGP35HF60W

Gate-Emitter Leakage Current :	100 nA
Product Category :	IGBT Transistors
Mounting Style :	Through Hole
Continuous Collector Current at 25 C :	60 A
Pd - Power Dissipation :	200 W
Collector- Emitter Voltage VCEO Max :	600 V
Package / Case :	TO-220
Maximum Operating Temperature :	+ 150 C
Maximum Gate Emitter Voltage :	20 V
Packaging :	Tube
Configuration :	Single
Collector-Emitter Saturation Voltage :	1.65 V
Manufacturer :	STMicroelectronics
Description	IGBT Transistors 35A Ultrafast IGBT 600V 100kHz

Detailed Product Description

The STGP35HF60W,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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