IRGPS4067DPbF

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IRGPS4067DPbF

Gate-Emitter Leakage Current :	400 nA
Product Category :	IGBT Transistors
Mounting Style :	Through Hole
Continuous Collector Current at 25 C :	240 A
Pd - Power Dissipation :	750 W
Collector- Emitter Voltage VCEO Max :	600 V
Package / Case :	TO-247-3
Packaging :	Tube
Maximum Gate Emitter Voltage :	20 V
Collector-Emitter Saturation Voltage :	2.05 V
Manufacturer :	Infineon Technologies
Description	IGBT Transistors 600V 1.6V 120A Solar UPS Welding

Detailed Product Description

The IRGPS4067DPbF,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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