VS-GP400TD60S

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

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VS-GP400TD60S

Gate-Emitter Leakage Current :	+/- 750 nA
Product Category :	IGBT Transistors
Mounting Style :	Chassis
Continuous Collector Current at 25 C :	758 A
Pd - Power Dissipation :	1.563 kW
Collector- Emitter Voltage VCEO Max :	600 V
Package / Case :	DIAP
Maximum Operating Temperature :	+ 150 C
Maximum Gate Emitter Voltage :	20 V
Configuration :	Dual
Collector-Emitter Saturation Voltage :	-
Manufacturer :	Vishay Semiconductors

Detailed Product Description

The VS-GP400TD60S,from Vishay Semiconductors,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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