IXXK160N65B4

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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IXXK160N65B4

Gate-Emitter Leakage Current :	200 nA
Product Category :	IGBT Transistors
Mounting Style :	Through Hole
Continuous Collector Current at 25 C :	310 A
Pd - Power Dissipation :	940 W
Collector- Emitter Voltage VCEO Max :	650 V
Package / Case :	TO-264-3
Maximum Operating Temperature :	+ 175 C
Maximum Gate Emitter Voltage :	20 V
Packaging :	Tube
Configuration :	Single
Collector-Emitter Saturation Voltage :	1.54 V
Manufacturer :	IXYS

Detailed Product Description

The IXXK160N65B4,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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