FGA6560WDF

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FGA6560WDF

Gate-Emitter Leakage Current :	400 nA
Product Category :	IGBT Transistors
Mounting Style :	Through Hole
Continuous Collector Current at 25 C :	120 A
Pd - Power Dissipation :	306 W
Collector- Emitter Voltage VCEO Max :	650 V
Package / Case :	TO-3PN
Maximum Operating Temperature :	+ 175 C
Maximum Gate Emitter Voltage :	30 V
Packaging :	Tube
Configuration :	Single
Collector-Emitter Saturation Voltage :	1.8 V
Manufacturer :	Fairchild Semiconductor

Detailed Product Description

The FGA6560WDF,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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