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Beijing Silk Road Enterprise Management Services Co.,LTD
Beijing Silk Road Enterprise Management Services Co.,LTD
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IRFBC40LCPBF

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IRFBC40LCPBF

Technology : MOSFET (Metal Oxide)
On resistance at different Id and Vgs (maximum) : 1.2 Ohm @ 3.7A, 10V
FET Type : N channel
Vgs(th) (maximum) for different Id : 4V @ 250µA
Vgs (maximum) : ±30V
Product Family : Transistor-FET, MOSFET-single
Drive Voltage (Max Rds On, Min Rds On) : 10V
Type of installation : Through Hole
Gate charge (Qg) (maximum) at different Vgs : 39nC @ 10V
Power dissipation (maximum) : 125W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Product Category : MOSFET
Drain-source voltage (Vdss) : 600V
Input capacitance (Ciss) (maximum) at different Vds : 1100pF @ 25V
Current at 25°C-Continuous Drain (Id) : 6.2A (Tc)
Package/shell : TO-220-3
Manufacturer : Vishay Semiconductors
Description MOSFET N-Chan 600V 6.2 Amp
Detailed Product Description
The IRFBC40LCPBF,from Vishay Semiconductors,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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