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Beijing Silk Road Enterprise Management Services Co.,LTD
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IRFB3206PBF

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IRFB3206PBF

Transistor Polarity : N-Channel
Technology : Si
Product Category : MOSFET
Mounting Style : Through Hole
Package / Case : TO-220-3
Vds - Drain-Source Breakdown Voltage : 60 V
Packaging : Tube
Id - Continuous Drain Current : 210 A
Rds On - Drain-Source Resistance : 2.4 mOhms
Number of Channels : 1 Channel
Vgs - Gate-Source Voltage : 20 V
Qg - Gate Charge : 120 nC
Manufacturer : Infineon Technologies
Description MOSFET MOSFT 60V 210A 3mOhm 120nC Qg
Detailed Product Description
The IRFB3206PBF,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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