IPP50R199CPXKSA1

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IPP50R199CPXKSA1

Product Category :	MOSFET
Vgs (Max) :	±20V
Current - Continuous Drain (Id) @ 25°C :	17A (Tc)
FET Type :	N-Channel
Mounting Type :	Through Hole
Gate Charge (Qg) (Max) @ Vgs :	45nC @ 10V
Manufacturer :	Infineon Technologies
Minimum Quantity :	1
Drive Voltage (Max Rds On, Min Rds On) :	10V
Operating Temperature :	-55°C ~ 150°C (TJ)
FET Feature :	-
Series :	CoolMOS™
Input Capacitance (Ciss) (Max) @ Vds :	1800pF @ 100V
Supplier Device Package :	PG-TO220-3-1
Part Status :	Active
Packaging :	Tube
Rds On (Max) @ Id, Vgs :	199 mOhm @ 9.9A, 10V
Power Dissipation (Max) :	139W (Tc)
Package / Case :	TO-220-3
Technology :	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :	3.5V @ 660µA
Drain to Source Voltage (Vdss) :	550V
Description	MOSFET N-CH 550V 17A TO-220

Detailed Product Description

The IPP50R199CPXKSA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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