IPD50R3K0CEAUMA1

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IPD50R3K0CEAUMA1

Product Category :	MOSFET
Vgs (Max) :	±20V
Current - Continuous Drain (Id) @ 25°C :	1.7A (Tc)
FET Type :	N-Channel
Mounting Type :	Surface Mount
Gate Charge (Qg) (Max) @ Vgs :	4.3nC @ 10V
Manufacturer :	Infineon Technologies
Minimum Quantity :	2500
Drive Voltage (Max Rds On, Min Rds On) :	13V
Operating Temperature :	-55°C ~ 150°C (TJ)
FET Feature :	-
Series :	CoolMOS™ CE
Input Capacitance (Ciss) (Max) @ Vds :	84pF @ 100V
Supplier Device Package :	PG-TO252-3
Part Status :	Active
Packaging :	Tape & Reel (TR)
Rds On (Max) @ Id, Vgs :	3 Ohm @ 400mA, 13V
Power Dissipation (Max) :	26W (Tc)
Package / Case :	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology :	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :	3.5V @ 30µA
Drain to Source Voltage (Vdss) :	500V
Description	MOSFET N-CH 500V 1.7A PG-TO-252

Detailed Product Description

The IPD50R3K0CEAUMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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