TK12A60D

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TK12A60D

Product Category :	MOSFET
Vgs (Max) :	±30V
Current - Continuous Drain (Id) @ 25°C :	12A (Ta)
FET Type :	N-Channel
Mounting Type :	Through Hole
Gate Charge (Qg) (Max) @ Vgs :	38nC @ 10V
Manufacturer :	Toshiba
Minimum Quantity :	2500
Drive Voltage (Max Rds On, Min Rds On) :	10V
Operating Temperature :	150°C (TJ)
FET Feature :	-
Series :	π-MOSVII
Input Capacitance (Ciss) (Max) @ Vds :	1800pF @ 25V
Supplier Device Package :	TO-220SIS
Part Status :	Active
Packaging :	Tube
Rds On (Max) @ Id, Vgs :	550 mOhm @ 6A, 10V
Power Dissipation (Max) :	45W (Tc)
Package / Case :	TO-220-3 Full Pack
Technology :	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :	4V @ 1mA
Drain to Source Voltage (Vdss) :	600V
Description	MOSFET N-CH 600V 12A TO-220SIS

Detailed Product Description

The TK12A60D,from Toshiba,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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