K20E60W

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Beijing Silk Road Enterprise Management Services Co.,LTD

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K20E60W

Product Category :	MOSFET
Vgs (Max) :	±30V
Current - Continuous Drain (Id) @ 25°C :	20A (Ta)
FET Type :	N-Channel
Mounting Type :	Through Hole
Gate Charge (Qg) (Max) @ Vgs :	48nC @ 10V
Manufacturer :	Toshiba
Minimum Quantity :	50
Drive Voltage (Max Rds On, Min Rds On) :	10V
Operating Temperature :	150°C (TJ)
FET Feature :	-
Series :	DTMOSIV
Input Capacitance (Ciss) (Max) @ Vds :	1680pF @ 300V
Supplier Device Package :	TO-220
Part Status :	Active
Packaging :	Tube
Rds On (Max) @ Id, Vgs :	155 mOhm @ 10A, 10V
Power Dissipation (Max) :	165W (Tc)
Package / Case :	TO-220-3
Technology :	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :	3.7V @ 1mA
Drain to Source Voltage (Vdss) :	600V
Description	MOSFET N-CH 600V 20A TO-220

Detailed Product Description

The K20E60W,from Toshiba,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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