IRF3711LPBF

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IRF3711LPBF

Product Category :	MOSFET
Vgs (Max) :	±20V
Current - Continuous Drain (Id) @ 25°C :	110A (Tc)
FET Type :	N-Channel
Mounting Type :	Through Hole
Gate Charge (Qg) (Max) @ Vgs :	44nC @ 4.5V
Manufacturer :	Infineon Technologies
Minimum Quantity :	3200
Drive Voltage (Max Rds On, Min Rds On) :	4.5V, 10V
Operating Temperature :	-55°C ~ 150°C (TJ)
FET Feature :	-
Series :	HEXFET®
Input Capacitance (Ciss) (Max) @ Vds :	2980pF @ 10V
Supplier Device Package :	TO-262
Part Status :	Obsolete
Packaging :	Tube
Rds On (Max) @ Id, Vgs :	6 mOhm @ 15A, 10V
Power Dissipation (Max) :	3.1W (Ta), 120W (Tc)
Package / Case :	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology :	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :	3V @ 250µA
Drain to Source Voltage (Vdss) :	20V
Description	MOSFET N-CH 20V 110A TO-262

Detailed Product Description

The IRF3711LPBF,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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