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Beijing Silk Road Enterprise Management Services Co.,LTD
Beijing Silk Road Enterprise Management Services Co.,LTD
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BTS113ANKSA1

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Beijing Silk Road Enterprise Management Services Co.,LTD

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BTS113ANKSA1

Product Category : MOSFET
Vgs (Max) : ±10V
Current - Continuous Drain (Id) @ 25°C : 11.5A (Tc)
FET Type : N-Channel
Mounting Type : Through Hole
Gate Charge (Qg) (Max) @ Vgs : -
Manufacturer : Infineon Technologies
Minimum Quantity : 500
Drive Voltage (Max Rds On, Min Rds On) : 4.5V
Operating Temperature : -55°C ~ 150°C (TJ)
FET Feature : -
Series : TEMPFET®
Input Capacitance (Ciss) (Max) @ Vds : 560pF @ 25V
Supplier Device Package : P-TO220AB
Part Status : Obsolete
Packaging : Tube
Rds On (Max) @ Id, Vgs : 170 mOhm @ 5.8A, 4.5V
Power Dissipation (Max) : 40W (Tc)
Package / Case : TO-220-3
Technology : MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Drain to Source Voltage (Vdss) : 60V
Description MOSFET N-CH 60V 11.5A TO-220AB
Detailed Product Description
The BTS113ANKSA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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