IPP100N06S3-04

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IPP100N06S3-04

Product Category :	MOSFET
Vgs (Max) :	±20V
Current - Continuous Drain (Id) @ 25°C :	100A (Tc)
FET Type :	N-Channel
Mounting Type :	Through Hole
Gate Charge (Qg) (Max) @ Vgs :	314nC @ 10V
Manufacturer :	Infineon Technologies
Minimum Quantity :	500
Drive Voltage (Max Rds On, Min Rds On) :	10V
Operating Temperature :	-55°C ~ 175°C (TJ)
FET Feature :	-
Series :	OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds :	14230pF @ 25V
Supplier Device Package :	PG-TO220-3-1
Part Status :	Obsolete
Packaging :	Tube
Rds On (Max) @ Id, Vgs :	4.4 mOhm @ 80A, 10V
Power Dissipation (Max) :	214W (Tc)
Package / Case :	TO-220-3
Technology :	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :	4V @ 150µA
Drain to Source Voltage (Vdss) :	55V
Description	MOSFET N-CH 55V 100A TO-220

Detailed Product Description

The IPP100N06S3-04,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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