IPU09N03LB G

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IPU09N03LB G

Product Category :	MOSFET
Vgs (Max) :	±20V
Current - Continuous Drain (Id) @ 25°C :	50A (Tc)
FET Type :	N-Channel
Mounting Type :	Through Hole
Gate Charge (Qg) (Max) @ Vgs :	13nC @ 5V
Manufacturer :	Infineon Technologies
Minimum Quantity :	1500
Drive Voltage (Max Rds On, Min Rds On) :	4.5V, 10V
Operating Temperature :	-55°C ~ 175°C (TJ)
FET Feature :	-
Series :	OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds :	1600pF @ 15V
Supplier Device Package :	PG-TO251-3
Part Status :	Obsolete
Packaging :	Tube
Rds On (Max) @ Id, Vgs :	9.3 mOhm @ 50A, 10V
Power Dissipation (Max) :	58W (Tc)
Package / Case :	TO-251-3 Short Leads, IPak, TO-251AA
Technology :	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :	2V @ 20µA
Drain to Source Voltage (Vdss) :	30V
Description	MOSFET N-CH 30V 50A IPAK

Detailed Product Description

The IPU09N03LB G,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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