IRFS3307PBF

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IRFS3307PBF

Product Category :	MOSFET
Vgs (Max) :	±20V
Current - Continuous Drain (Id) @ 25°C :	120A (Tc)
FET Type :	N-Channel
Mounting Type :	Surface Mount
Gate Charge (Qg) (Max) @ Vgs :	180nC @ 10V
Manufacturer :	Infineon Technologies
Minimum Quantity :	400
Drive Voltage (Max Rds On, Min Rds On) :	10V
Operating Temperature :	-55°C ~ 175°C (TJ)
FET Feature :	-
Series :	HEXFET®
Input Capacitance (Ciss) (Max) @ Vds :	5150pF @ 50V
Supplier Device Package :	D2PAK
Part Status :	Obsolete
Packaging :	Tube
Rds On (Max) @ Id, Vgs :	6.3 mOhm @ 75A, 10V
Power Dissipation (Max) :	200W (Tc)
Package / Case :	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology :	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :	4V @ 150µA
Drain to Source Voltage (Vdss) :	75V
Description	MOSFET N-CH 75V 120A D2PAK

Detailed Product Description

The IRFS3307PBF,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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