IRFH5020TR2PBF

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IRFH5020TR2PBF

Product Category :	MOSFET
Vgs (Max) :	±20V
Current - Continuous Drain (Id) @ 25°C :	5.1A (Ta)
FET Type :	N-Channel
Mounting Type :	Surface Mount
Gate Charge (Qg) (Max) @ Vgs :	54nC @ 10V
Manufacturer :	Infineon Technologies
Minimum Quantity :	1
Drive Voltage (Max Rds On, Min Rds On) :	10V
Operating Temperature :	-55°C ~ 150°C (TJ)
FET Feature :	-
Series :	HEXFET®
Input Capacitance (Ciss) (Max) @ Vds :	2290pF @ 100V
Supplier Device Package :	8-PQFN (5x6)
Part Status :	Obsolete
Packaging :	Cut Tape (CT)
Rds On (Max) @ Id, Vgs :	55 mOhm @ 7.5A, 10V
Power Dissipation (Max) :	3.6W (Ta), 8.3W (Tc)
Package / Case :	8-PowerTDFN
Technology :	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :	5V @ 150µA
Drain to Source Voltage (Vdss) :	200V
Description	MOSFET N-CH 200V 5.1A 8PQFN

Detailed Product Description

The IRFH5020TR2PBF,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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