BSB012NE2LX

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BSB012NE2LX

Product Category :	MOSFET
Vgs (Max) :	±20V
Current - Continuous Drain (Id) @ 25°C :	37A (Ta), 170A (Tc)
FET Type :	N-Channel
Mounting Type :	Surface Mount
Gate Charge (Qg) (Max) @ Vgs :	67nC @ 10V
Manufacturer :	Infineon Technologies
Minimum Quantity :	5000
Drive Voltage (Max Rds On, Min Rds On) :	4.5V, 10V
Operating Temperature :	-40°C ~ 150°C (TJ)
FET Feature :	-
Series :	OptiMOS™
Input Capacitance (Ciss) (Max) @ Vds :	4900pF @ 12V
Supplier Device Package :	MG-WDSON-2, CanPAK M™
Part Status :	Obsolete
Packaging :	Tape & Reel (TR)
Rds On (Max) @ Id, Vgs :	1.2 mOhm @ 30A, 10V
Power Dissipation (Max) :	2.8W (Ta), 57W (Tc)
Package / Case :	3-WDSON
Technology :	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :	2V @ 250µA
Drain to Source Voltage (Vdss) :	25V
Description	MOSFET N-CH 25V 170A WDSON-2

Detailed Product Description

The BSB012NE2LX,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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