2SC3423

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2SC3423

Transistor Polarity :	NPN
Product Category :	Bipolar Transistor - Bipolar Junction Transistor (BJT)
Installation style :	Through Hole
Pd-power dissipation :	5 W
Factory packaging quantity :	600
Collector - base voltage VCBO :	150 V
Package :	Tube
Collector continuous current :	50 mA
Gain Bandwidth Product fT :	200 MHz
Configuration :	Single
Emitter - base voltage VEBO :	5 V
Collector-emitter maximum voltage VCEO :	150 V
DC current gain hFE maximum :	240
DC Collector / Base Gain hfe Min :	80
Manufacturer :	Toshiba Semiconductor
Description	Bipolar Transistors - Bipolar Junction Transistors (BJT) Pb-FF TO126 PLS PLN-N,ACTIVE,

Detailed Product Description

The 2SC3423,from Toshiba Semiconductor,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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