TRS6E65F,S1Q

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

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TRS6E65F,S1Q

Category	Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status	Active
Current - Reverse Leakage @ Vr	30 µA @ 650 V
Mounting Type	Through Hole
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 6 A
Package	Tube
Series	-
Capacitance @ Vr, F	22pF @ 650V, 1MHz
Supplier Device Package	TO-220-2L
Reverse Recovery Time (trr)	0 ns
Mfr	Toshiba Semiconductor and Storage
Technology	SiC (Silicon Carbide) Schottky
Operating Temperature - Junction	175°C (Max)
Package / Case	TO-220-2
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	6A
Speed	No Recovery Time > 500mA (Io)
Base Product Number	TRS6E65
Description	DIODE SIL CARB 650V 6A TO220-2L

Detailed Product Description

Diode 650 V 6A Through Hole TO-220-2L

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