FJN3313RBU

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Beijing Silk Road Enterprise Management Services Co.,LTD

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FJN3313RBU

Category	Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max)	100 mA
Product Status	Obsolete
Transistor Type	NPN - Pre-Biased
Frequency - Transition	250 MHz
Mounting Type	Through Hole
Package	Bulk
Series	-
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	TO-92-3
Resistor - Base (R1)	2.2 kOhms
Mfr	onsemi
Resistor - Emitter Base (R2)	47 kOhms
Current - Collector Cutoff (Max)	100nA (ICBO)
Power - Max	300 mW
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce	68 @ 5mA, 5V
Base Product Number	FJN331
Description	TRANS PREBIAS NPN 300MW TO92-3

Detailed Product Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92-3

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