BCR119WH6327

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Beijing Silk Road Enterprise Management Services Co.,LTD

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BCR119WH6327

Category	Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max)	100 mA
Product Status	Active
Transistor Type	NPN - Pre-Biased
Mounting Type	Surface Mount
Frequency - Transition	150 MHz
Package	Bulk
Series	-
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	PG-SOT323-3-1
Resistor - Base (R1)	4.7 kOhms
Mfr	Infineon Technologies
Current - Collector Cutoff (Max)	100nA (ICBO)
Power - Max	250 mW
Package / Case	SC-70, SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 5mA, 5V
Base Product Number	BCR119
Description	BIPOLAR DIGITAL TRANSISTOR

Detailed Product Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 250 mW Surface Mount PG-SOT323-3-1

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