PDTB143EQA147

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Beijing Silk Road Enterprise Management Services Co.,LTD

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PDTB143EQA147

Category	Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max)	500 mA
Product Status	Active
Transistor Type	PNP - Pre-Biased
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Package	Bulk
Series	PDTB143
Vce Saturation (Max) @ Ib, Ic	100mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	DFN1010D-3
Resistor - Base (R1)	4.7 kOhms
Mfr	NXP USA Inc.
Resistor - Emitter Base (R2)	4.7 kOhms
Current - Collector Cutoff (Max)	500nA
Power - Max	325 mW
Package / Case	3-XDFN Exposed Pad
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 50mA, 5V
Base Product Number	PDTB143
Description	PDTB143EQA BJT PNP

Detailed Product Description

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 150 MHz 325 mW Surface Mount DFN1010D-3

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