BCR583E6327

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

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BCR583E6327

Category	Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max)	500 mA
Product Status	Active
Transistor Type	PNP - Pre-Biased
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Package	Bulk
Series	Automotive, AEC-Q101
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	PG-SOT23-3-1
Resistor - Base (R1)	10 kOhms
Mfr	Infineon Technologies
Resistor - Emitter Base (R2)	10 kOhms
Current - Collector Cutoff (Max)	100nA (ICBO)
Power - Max	330 mW
Package / Case	TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 50mA, 5V
Base Product Number	BCR583
Description	BIPOLAR DIGITAL TRANSISTOR

Detailed Product Description

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 150 MHz 330 mW Surface Mount PG-SOT23-3-1

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