EMD30T2R

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Beijing Silk Road Enterprise Management Services Co.,LTD

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EMD30T2R

Category	Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max)	200mA
Product Status	Not For New Designs
Transistor Type	1 PNP Pre-Biased, 1 NPN
Frequency - Transition	260MHz
Mounting Type	Surface Mount
Package	Tape & Reel (TR)
Series	-
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max)	50V, 30V
Supplier Device Package	EMT6
Resistor - Base (R1)	10kOhms, 1kOhms
Mfr	Rohm Semiconductor
Resistor - Emitter Base (R2)	10kOhms
Current - Collector Cutoff (Max)	500nA
Power - Max	150mW
Package / Case	SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V / 140 @ 100mA, 2V
Base Product Number	EMD30

Detailed Product Description

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased, 1 NPN 50V, 30V 200mA 260MHz 150mW Surface Mount EMT6

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