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Beijing Silk Road Enterprise Management Services Co.,LTD
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EMF5XV6T1G

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EMF5XV6T1G

Category Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max) 100mA, 500mA
Product Status Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Frequency - Transition -
Mounting Type Surface Mount
Package Tape & Reel (TR)
Series EMF
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA / 250mV @ 10mA, 200mA
Voltage - Collector Emitter Breakdown (Max) 50V, 12V
Supplier Device Package SOT-563
Resistor - Base (R1) 47kOhms
Mfr onsemi
Resistor - Emitter Base (R2) -
Current - Collector Cutoff (Max) 500nA, 100nA (ICBO)
Power - Max 357mW
Package / Case SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V / 270 @ 10mA, 2V
Base Product Number EMF5XV
Detailed Product Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V, 12V 100mA, 500mA 357mW Surface Mount SOT-563
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