PBSS5130PAP,115

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

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PBSS5130PAP,115

Category	Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays
Current - Collector (Ic) (Max)	1A
Product Status	Active
Transistor Type	2 PNP (Dual)
Mounting Type	Surface Mount
Frequency - Transition	125MHz
Package	Bulk
Series	-
Vce Saturation (Max) @ Ib, Ic	280mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max)	30V
Supplier Device Package	6-HUSON (2x2)
Mfr	NXP USA Inc.
Current - Collector Cutoff (Max)	100nA (ICBO)
Power - Max	510mW
Package / Case	6-UFDFN Exposed Pad
Operating Temperature	150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce	170 @ 500mA, 2V
Base Product Number	PBSS5130
Description	NOW NEXPERIA PBSS5130PAP - SMALL

Detailed Product Description

Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 1A 125MHz 510mW Surface Mount 6-HUSON (2x2)

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