2N4854

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2N4854

Category	Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays
Current - Collector (Ic) (Max)	600mA
Product Status	Active
Transistor Type	NPN, PNP
Mounting Type	Through Hole
Frequency - Transition	-
Package	Bulk
Series	-
Vce Saturation (Max) @ Ib, Ic	400mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max)	40V
Supplier Device Package	TO-78-6
Mfr	Microchip Technology
Current - Collector Cutoff (Max)	10µA (ICBO)
Power - Max	600mW
Package / Case	TO-78-6 Metal Can
Operating Temperature	-65°C ~ 200°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Base Product Number	2N485
Description	NPN/PNP SILICON COMP SMALL SIGNA

Detailed Product Description

Bipolar (BJT) Transistor Array NPN, PNP 40V 600mA 600mW Through Hole TO-78-6

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