JAN2N5796

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Beijing Silk Road Enterprise Management Services Co.,LTD

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JAN2N5796

Category	Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays
Current - Collector (Ic) (Max)	600mA
Product Status	Active
Transistor Type	2 PNP (Dual)
Mounting Type	Through Hole
Frequency - Transition	-
Package	Bulk
Series	Military, MIL-PRF-19500/496
Vce Saturation (Max) @ Ib, Ic	1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	60V
Supplier Device Package	TO-78-6
Mfr	Microchip Technology
Current - Collector Cutoff (Max)	10µA (ICBO)
Power - Max	600mW
Package / Case	TO-78-6 Metal Can
Operating Temperature	-65°C ~ 175°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Base Product Number	2N5796
Description	NPN TRANSISTOR

Detailed Product Description

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA 600mW Through Hole TO-78-6

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